UM5K1N transistors small switching (30v, 0.1a) UM5K1N ! features 1) two 2sk3018 transistors in a single umt package. 2) mounting cost and area can be cut in half. 3) low on-resistance. 4) low voltage drive (2.5v) makes this device ideal for portable equipment. 5) easily designed drive circuits. ! ! ! ! applications interfacing, switching (30v, 100ma) ! ! ! ! structure silicon n-channel mosfet ! ! ! ! external dimensions (units : mm) rohm : umt5 eiaj : sc-88a abbreviated symbol : k1 0.9 0.15 0to0.1 0.1min. 0.7 2.1 1.3 0.65 2.0 ( 4 ) ( 1 ) ( 6 ) 0.2 1.25 ( 2 ) 0.65 ( 3 ) each lead has same dimensions ! ! ! ! equivalent circuit (1) ? gate protection diode ? gate protection diode tr1 tr2 ? a protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltagesare exceeded. (1) tr1 gate (2) source (3) tr2 gate (4) tr2 drain (6) tr1 drain (2) (3) (4) (6) ! ! ! ! packaging specifications tr 3000 UM5K1N type package code basic ordering unit (pieces) taping
UM5K1N transistors ! ! ! ! absolute maximum ratings (ta=25 c) parameter drain-source voltage gate-source voltage drain current total power dissipation (tc=25?c) channel temperature storage temperature v v ma ma mw ?c ma continuous pulsed continuous pulsed ma ?c v dss v gss i dr p d ? 2 tch i d i drp ? 1 i dp ? 1 tstg symbol 30 ?0 100 200 100 200 150 150 ? 55 + 150 limits unit ? 1 pw 10 s, duty cycle 50% ? 2 with each pin mounted on the recommended lands. reverse drain current ! ! ! ! electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) r ds(on) c iss y fs c oss c rss min. ? 30 ? 0.8 ? ? 20 ? ? ? ? ? ? 5 13 ? 9 4 1 ? 1.0 1.5 8 ? 713 ? ? ? ? av gs = 20v, v ds = 0v i d = 10 a, v gs = 0v v ds = 30v, v gs = 0v v ds = 3v, i d = 100 a i d = 10ma, v gs = 4v i d = 1ma, v gs = 2.5v v ds = 5v i d = 10ma, v ds = 3v v gs = 0v f = 1mhz v a v ? ? pf ms pf pf t d(on) ? 15 ? i d = 10ma, v dd 5v ns t r ? 35 ? v gs = 5v ns t d(off) ? 80 ? r l = 500 ? ns t r ? 80 ? r gs = 10 ? ns typ. max. unit test conditions gate-source leakage drain-source breakdown voltage zero gate voltage drain curren t gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time static drain-source on-stage resistance ! ! ! ! electrical characteristic curves 012345 0 0.05 0.1 0.15 drain current : i d ( a) drain-source voltage : v ds ( v) 3v 3.5v 2.5v v gs =1.5v 4v 2v ta=25 ? c pulsed fig.1 typical output characteristics 04 0.1m 100m drain current : i d ( a) gate-source voltage : v gs ( v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta=125 ? c 75 ? c 25 ? c ? 25 ? c v ds =3v pulsed fig.2 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs (th) ( v) channel temperature : tch ( ? c) 0.5 ? 25 25 50 75 100 125 150 v ds =3v i d =0.1ma pulsed fig.3 gate threshold voltage vs. channel temperature
UM5K1N transistors 0.001 1 2 50 static drain-source on-state resistance : r ds (on) ( ? ) drain current : i d ( a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 ? c 75 ? c 25 ? c ? 25 ? c v gs =4v pulsed fig.4 static drain-source on-state resistance vs. drain current ( i ) 0.001 1 2 50 static drain-source on-state resistance : r ds (on) ( ? ) drain current : i d ( a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 ? c 75 ? c 25 ? c ? 25 ? c v gs =2.5v pulsed fig.5 static drain-source on-state resistance vs. drain current ( ii ) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs ( v) i d =0.1a static drain-source on-state resistance : r ds (on) ( ? ) ta=25 ? c pulsed i d =0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage ? 50 0 25 150 0 3 6 9 channel temperature : tch ( ? c) static drain-source on-state resistance : r ds (on) ( ? ) ? 25 50 75 100 125 2 1 4 5 7 8 v gs =4v pulsed i d =100ma i d =50ma fig.7 static drain-source on-state resistance vs. channel temperature 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : yfs (s) drain current : i d ( a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta= ? 25 ? c 25 ? c 75 ? c 125 ? c v ds =3v pulsed fig.8 forward transfer admittance vs. drain current 200m reverse drain current : i dr ( a) source-drain voltage : v sd ( v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125 ? c 75 ? c 25 ? c ? 25 ? c fig.9 reverse drain current vs. source-drain voltage ( i ) 200m reverse drain current : i dr ( a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25 ? c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage ( ii ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds ( v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 c iss c oss c rss ta =25 ? c f=1mh z v gs =0v fig.11 typical capacitance vs. drain-source voltage 0.1 10 20 500 switching time : t (ns) drain current : i d ( ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 ta =25 ? c v dd =5v v gs =5v r g =10 ? pulsed t d (off) t r t d (on) t f fig.12 switching characteristics (see figures 13 and 14 for the measurment circuit and resultant waveforms)
UM5K1N transistors ! ! ! ! switching characteristics measurement circuit fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d (off) t r t on t d (on) fig.14 switching time waveforms
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